data sheet 1 2001-01-01 description this gaas mmic frequency tripler is intended for use in radio link applications. the device is fabricated with a 0.13 micron pseudomorphic ingaas/algaas/gaas high electron mobility transistor processing technology. 27 - 33 ghz gaas tripler mmic 27 - 33 ghz tripler preliminary data sheet ? monolithic microwave integrated circuit (mmic) frequency tripler (coplanar design) input/output matched to 50 ? input frequency range: 9 ghz to 11 ghz output frequency range: 27 ghz to 33 ghz chip size: 2.25 mm 2.0 mm esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code package 27 - 33 ghz tripler ? on request chip electrical specifications ( v ds = 3 v) parameter limit values unit test conditions min. typ. max. input frequency range f 0 9?11ghz? gain ? ? 12 ? db ? input power 10 ? 15 dbm ? output power at f 0 ? < ? 15 ? dbm ? v gs ? 1 ? 0.75 0 v ? i ds @ 14 dbm input power ? 40 ? ma ?
gaas components 27 - 33 ghz tripler data sheet 2 2001-01-01 measured data (on chip measurements) f 0 = 9.933 ghz, v gs = ? 0.75 v, v ds = 3 v technology data parameter value chip thickness 95 m chip size 2.25 mm 2.0 mm dc/rf bond pads 100 m 100 m/70 m 70 m bond pad material au (plated gold) chip passivation sin (silicon nitride) -5 -20 eht09223 -25 dbm -15 -20 -10 -15 -5 -10 0 -5 5 0 10 5 15 10 dbm db gain 0 5 10 15 25 output power input power 2 f 1 f 3 f
gaas components 27 - 33 ghz tripler data sheet 3 2001-01-01 recommendation of bonding conditions figure 1 bond plan capacitors with approximately 100 pf should be used to block the v g and v d bias pads to ground. parameter thermocompression nailhead, without ultrasonic wedge bonding bond pull test mil 883, > 2 g table temp. 250 c 250 c 1 : 2.5 g tool temp. 180 c 150 c 2 : 3.1 g scrub 100 hz ? 3 : 3.2 g bond force 50 g 25 g 4 : 3.0 g wire diameter 25 m17 m 5 : 2.8 g eht09224 x3 coplanar gnd coplanar gnd coplanar gnd coplanar gnd rf in d v v g rf out
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